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| for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 1 hmc770lp4be v01.0310 functional diagram electrical specifcations, t a = +25 c, vdd = vdd1 = vdd2 = +5v, rbias = r1 = 200 [2] the h mc 770 lp 4b e is ideal for: ? c ellular / pcs / 3g ? f ixed wireless & w l a n ? c at v , c able m odem & db s ? m icrowave r adio & test e quipment ? if & rf applications high o utput ip 3: +40 dbm s ingle p ositive s upply: +5 v l ow n oise f igure: 2.5 db [1] differential rf i / o s 20 l ead 4x4 mm sm t p ackage: 16mm2 the h mc 770 lp 4b e is a gaas ph em t differential gain block mmic amplifer covering 40 m hz to 1 ghz and packaged in a 4x4 mm plastic q fn sm t package. this versatile amplifer can be used as a cascadable if or rf gain stage in both 50 o hm and 75 o hm applications. the h mc 770 lp 4b e delivers 16 db gain, and +40 dbm output, with only 2.5 db noise fgure. differential i / o s make this amplifer ideal for transimpedance and s aw flter applications, and in transceivers where the if path must be handled differentially for improved noise performance. e valuation pc bs are all available with either sm a (50) or type f (75) connectors. p arameter m in. typ. m ax. m in. typ. m ax. units zo = 50 o hms zo =75 o hms f requency r ange 0.04 - 1 0.04 - 1 ghz gain [2] 12 16.5 12 16 db gain v ariation o ver temperature 0.006 0.008 db / c i nput r eturn l oss 17 15 db o utput r eturn l oss 18 15 db o utput p ower for 1 db c ompression ( p 1db) 20 23 21 23.5 dbm o utput third o rder i ntercept ( ip 3) ( p out = 0 dbm per tone, 1 m hz spacing) 40 37.5 dbm n oise f igure [2] 2.5 4 2.75 4 db transimpedance - 700 o hms i nput r eferred c urrent n oise [3] - 6 pa / hz s upply c urrent 1 ( i dd1) 136 160 136 160 ma s upply c urrent 2 ( i dd2) 134 160 134 160 ma [1] 1:1 balun losses have no t been removed from measurements. s ee list of materials for eval pc b for the type of balun. [2] s ee application circuit [3] i ncludes balun loss, no photo diode. s ee list of materials for eval pc b for the type of balun. typical applications features general description gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 2 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz gain & return loss [1] 50 ohm data return loss vs. temperature [1] gain vs. temperature [1] return loss vs. vdd [1] -30 -20 -10 0 10 20 0 0.2 0.4 0.6 0.8 1 s21 s11 s22 frequency (ghz) response (db) -30 -25 -20 -15 -10 -5 0 0 0.2 0.4 0.6 0.8 1 +25c +85c -40c frequency (ghz) return loss (db) s11 s22 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 +25c +85c -40c frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 0 0.2 0.4 0.6 0.8 1 4.5v 5.0v 5.5v frequency (ghz) return loss (db) s22 s11 gain vs. vdd [1] gain vs. rbias 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 4.5v 5.0v 5.5v frequency (ghz) gain (db) 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 rbias = 1.5k ohms rbias = 600 ohms rbias = 200 ohms frequency (ghz) gain (db) [1] r bias= r 1=200 o hms. s ee application circuit for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 3 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz return loss vs. rbias 50 ohm data isolation vs. rbias noise figure vs. temperature [1] noise figure vs. temperature for low frequencies [1][2] noise figure vs. vdd for low frequencies [1][2] noise figure vs. vdd [1] -30 -25 -20 -15 -10 -5 0 0 0.2 0.4 0.6 0.8 1 rbias = 1.5k ohms rbias = 600 ohms rbias = 200 ohms frequency (ghz) return loss (db) s11 s22 -30 -25 -20 -15 -10 -5 0 0 0.2 0.4 0.6 0.8 1 rbias = 1.5k ohms rbias = 600 ohms rbias = 200 ohms frequency (ghz) isolation (db) 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 +25c +85c -40c noise figure (db) frequency (ghz) 0 2 4 6 8 0 25 50 75 100 125 150 175 200 +25c +85c -40c noise figure (db) frequency (mhz) 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 4.5v 5.0v 5.5v noise figure (db) frequency (ghz) 0 2 4 6 8 0 25 50 75 100 125 150 175 200 4.5v 5.0v 5.5v noise figure (db) frequency (mhz) [1] r bias= r 1=200 o hms. s ee application circuit. [2] s ee application circuit for the tune for low frequencies. for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 4 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz 50 ohm data noise figure vs. rbias noise figure vs. rbias for low frequencies [2] p1db vs. temperature [1] 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 rbias = 1.5k ohms rbias = 600 ohms rbias = 200 ohms noise figure (db) frequency (ghz) 0 2 4 6 8 0 25 50 75 100 125 150 175 200 rbias=1.5k ohms rbias=600 ohms rbias=200 ohms noise figure (db) frequency (mhz) 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 +25c +85c -40c frequency (ghz) p1db (dbm) [1] r bias= r 1=200 o hms. s ee application circuit. [2] s ee application circuit for the tune for low frequencies. p1db vs. vdd [1] p1db vs. rbias [1] 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 4.5v 5.0v 5.5v frequency (ghz) p1db (dbm) 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 rbias = 1.5k ohms rbias = 600 ohms rbias = 200 ohms frequency (ghz) p1db (dbm) for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 5 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz 50 ohm data output ip3 vs. rbias idd vs. rbias output ip3 vs. temperature [1] output ip3 vs. vdd [1] 20 25 30 35 40 45 50 0 0.2 0.4 0.6 0.8 1 rbias = 1.5k ohms rbias = 600 ohms rbias = 200 ohms frequency (ghz) ip3 (dbm) 0 50 100 150 200 250 300 350 400 0 200 400 600 800 1000 1200 1400 1600 4.5 v 5.0 v 5.5 v idd (ma) rbias (ohm) 20 25 30 35 40 45 50 0 0.2 0.4 0.6 0.8 1 +25c +85c -40c frequency (ghz) ip3 (dbm) 20 25 30 35 40 45 50 0 0.2 0.4 0.6 0.8 1 4.5v 5.0v 5.5v frequency (ghz) ip3 (dbm) [1] r bias= r 1=200 o hms. s ee application circuit for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 6 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz gain & return loss [1] 75 ohm data return loss vs. temperature [1] gain vs. temperature [1] return loss vs. vdd [1] gain vs. vdd [1] gain vs. rbias -30 -20 -10 0 10 20 0 0.2 0.4 0.6 0.8 1 s21 s11 s22 frequency (ghz) response (db) -30 -25 -20 -15 -10 -5 0 0 0.2 0.4 0.6 0.8 1 +25c +85c -40c frequency (ghz) return loss (db) s11 s22 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 +25c +85c -40c frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 0 0.2 0.4 0.6 0.8 1 4.5v 5.0v 5.5v frequency (ghz) return loss (db) s11 s22 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 4.5v 5.0v 5.5v frequency (ghz) gain (db) 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 rbias = 1.5k ohms rbias = 600 ohms rbias = 200 ohms frequency (ghz) gain (db) [1] r bias= r 1=200 o hms. s ee application circuit for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 7 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz return loss vs. rbias 75 ohm data noise figure vs. temperature [1] noise figure vs. vdd [1] -30 -25 -20 -15 -10 -5 0 0 0.2 0.4 0.6 0.8 1 rbias =1.5k ohms rbias =600 ohms rbias =200 ohms frequency (ghz) return loss (db) s11 s22 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 +25c +85c -40c noise figure (db) frequency (ghz) 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 4.5v 5.0v 5.5v noise figure (db) frequency (ghz) noise figure vs. temperature for low frequencies [1][2] noise figure vs. vdd for low frequencies [1][2] 0 2 4 6 8 0 25 50 75 100 125 150 175 200 +25c +85c -40c noise figure (db) frequency (mhz) 0 2 4 6 8 0 25 50 75 100 125 150 175 200 4.5v 5.0v 5.5v noise figure (db) frequency (mhz) [1] r bias= r 1=200 o hms. s ee application circuit. [2] s ee application circuit for the tune for low frequencies. for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 8 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz noise figure vs. rbias p1db vs. temperature [1] p1db vs. vdd [1] 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 rbias = 1.5k ohms rbias = 600 ohms rbias = 200 ohms noise figure (db) frequency (ghz) 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 +25c +85c -40c frequency (ghz) p1db (dbm) 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 4.5v 5.0v 5.5v frequency (ghz) p1db (dbm) noise figure vs. rbias for low frequencies [1][2] 0 2 4 6 8 0 25 50 75 100 125 150 175 200 rbias=1.5k ohms rbias=600 ohms rbias=200 ohms noise figure (db) frequency (mhz) [1] r bias= r 1=200 o hms. s ee application circuit. [2] s ee application circuit for the tune for low frequencies. 75 ohm data for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 9 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz p1db vs. rbias 75 ohm data output ip3 vs. temperature [1] output ip3 vs. rbias output ip3 vs. vdd [1] input referred current noise vs. frequency [1] 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 rbias = 1.5k ohms rbias = 600 ohms rbias = 200 ohms frequency (ghz) p1db (dbm) 20 25 30 35 40 45 50 0 0.2 0.4 0.6 0.8 1 +25c +85c -40c frequency (ghz) ip3 (dbm) 20 25 30 35 40 45 50 0 0.2 0.4 0.6 0.8 1 4.5v 5.0v 5.5v frequency (ghz) ip3 (dbm) 20 25 30 35 40 45 50 0 0.2 0.4 0.6 0.8 1 rbias = 1.5k ohms rbias = 600 ohms rbias = 200 ohms frequency (ghz) ip3 (dbm) [1] r bias= r 1=200 o hms. s ee application circuit 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 frequency (ghz) noise (pa/ hz) for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 10 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz drain bias v oltage 5.5 v dc rf i nput p ower ( rfin ) +20 dbm c hannel temperature 150 c c ontinuous p diss (t=85 c ) (derate 33.21 mw/ c above +85 c ) 2.16w thermal r esistance (channel to ground paddle) 30.11 c /w s torage temperature -65 to 150 c o perating temperature -40 to +85 c es d s ensitivity (hb m ) c lass 1a absolute maximum ratings outline drawing p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [1] h mc 770 lp 4b e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 3 [2] h770 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c package information no t es : 1. p a ck ag e b o dy m at eri a l : lo w s t ress in j ec t ion mol d e d pl a s t ic silic a a n d silicon impre g n at e d. 2. le ad a n d g ro u n d p add le m at eri a l : copper a llo y. 3. le ad a n d g ro u n d p add le pl at in g: 100% m att e t in 4. d imensions a re in inc h es [ millime t ers ]. 5. le ad sp a cin g t oler a nce is non - c u m u l at ive . 6. p ad bu rr len gth s ha ll b e 0.15mm m ax. p ad bu rr h ei ght s ha ll b e 0.05mm m ax. 7. p a ck ag e wa rp s ha ll not e x cee d 0.05mm 8. a ll g ro u n d le ad s a n d g ro u n d p add le m u s t b e sol d ere d to pc b rf g ro u n d. 9. refer to h i tt i t e a pplic at ion not e for s ugg es t e d pc b l a n d p att ern . for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 11 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz application circuit - for transimpedance amplifer mode for use with 75 ohm evaluation board p in n umber f unction description i nterface s chematic 1, 5 inn , inp this pin is d c coupled an off chip d c blocking capacitor is required 11, 15 o ut n , o ut p this pin is d c coupled an off chip d c blocking capacitor is required 9, 17 rfcn , rfcp rf c hoke and d c bias ( v dd) for the output stage 2 - 4, 6 - 8, 10, 12 - 14, 16, 18, 19 n / c these pins may be left unconnected. 20 b i a s this pin is used to set the d c current of the amplifer by selection of the external bias resistor. s ee application circuit. p ackage base g n d p ackage bottom must be connected to rf /d c ground. pin descriptions for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 12 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz application circuit - for differential amplifer mode for use with either 50 or 75 ohm evaluation board components for selected options tune o ption 50 o hm 50 o hm l ow f requency 75 o hm 75 o hm l ow f requency e valuation pc b n umber 125980 127930 121737 127931 j1, j2 sm a connector f connector t1, t2 [1] e t c 1-1-13 e t c 1-1t-5t r e t c 1-1-13 e t c 1-1t-5t r [1] 1:1 balun balun e t c 1-1-13 is recommended for broadband and high frequency applications with the limitation that e t c 1-1-13 degrades noise performance below 200 m hz. balun e t c 1-1t-5t r is recommended for low frequency applications with the limitation that e t c 1-1t-5t r degrades gain above 500 m hz. for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 13 evaluation pcb - 50 ohm the circuit board used in the fnal application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be con - nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb [1] i tem description j1, j2 johnson sm a c onnector j3 - j5 d c p in c 1 - c 4, c 7, c 13 10 n f c apacitor, 0603 p kg. c 5, c 6, c 8 - c 12, c 16 100 p f c apacitor, 0402 p kg. c 10, c 12 10 n f c apacitor, 0402 p kg. c 14, c 15 2.2 f c apacitor, tantalum l 1, l 2 1 uh i nductor, 0805 p kg. r 1 ( r bias) 200 o hm r esistor, 0402 p kg. r 2, r 3 0 o hm r esistor, 0805 p kg. t1, t2 [2] 1:1 transformer u1 h mc 770 lp 4b e gain block amplifer pc b [3] 125978 e valuation pc b [1] when requesting an evaluation board, please reference the appropriate evaluation pc b number listed in the table c omponents for s elected o ptions. [2] p lease refer to c omponents for s elected o ptions table for values [3] c ircuit board m aterial: r ogers 4350 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 14 evaluation pcb - 75 ohm the circuit board used in the fnal application should use rf circuit design techniques. s ignal lines should have 75 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb [1] i tem description j1, j2 f - c onnector j3 - j5 d c p in c 1 - c 4, c 7, c 13 10 n f c apacitor, 0603 p kg. c 5, c 6, c 8 - c 12, c 16 100 p f c apacitor, 0402 p kg. c 10, c 12 10 n f c apacitor, 0402 p kg. c 14, c 15 2.2 f c apacitor, tantalum l 1, l 2 1 uh i nductor, 0805 p kg. r 1 ( r bias) 200 o hm r esistor, 0402 p kg. r 2, r 3 0 o hm r esistor, 0805 p kg. t1, t2 [2] 1:1 transformer u1 h mc 770 lp 4b e gain block amplifer pc b [3] 121735 e valuation pc b [1] when requesting an evaluation board, please reference the appropriate evaluation pc b number listed in the table c omponents for s elected o ptions. [2] p lease refer to c omponents for s elected o ptions table for values [3] c ircuit board m aterial: r ogers 4350 hmc770lp4be v01.0310 gaas phemt 50 / 75 ohm differential amplifier, 0.04 - 1 ghz |
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